Theoretical investigation of incomplete ionization of dopants in 6H-SiC metal-oxide-semiconductor capacitors

Journal of Applied Physics

Volumn 86, Issue 4, 1999, Pages 2232-2236

  Raynaud, C ^a   Autran, J L ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001557969     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371061     Document Type: Article

References (13)

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