Effect of ballistic electron transport in metal-n-GaAs-n+-GaAs Schottky-barrier structures

Semiconductors

Volumn 35, Issue 7, 2001, Pages 788-795

  Torkhov, N A ^a  

^a Semiconductor Research Institute   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035402707     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1385714     Document Type: Article

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