Tunnel metal-dielectric-semiconductor structure with a high current density (reverse-bias mode)

Semiconductors

Volumn 30, Issue 9, 1996, Pages 899-903

  Veksler, M I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039612210     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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