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Volumn 227-228, Issue , 2001, Pages 650-654
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Growth of ZnCdSe quantum wells at low substrate temperatures using migration enhanced epitaxy
a
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Author keywords
A3. Atomic layer epitaxy; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting II VI materials; B3. Laser diodes; B3. Light Emitting diodes
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Indexed keywords
DIFFUSION;
LIGHT EMITTING DIODES;
MOLECULAR BEAM EPITAXY;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTING CADMIUM COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR SUPERLATTICES;
ATOMIC LAYER EPITAXY;
MIGRATION ENHANCED EPITAXY;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0035399380
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00791-6 Document Type: Conference Paper |
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Times cited : (3)
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References (11)
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