Comparative study of molecular beam and migration-enhanced epitaxy of ZnCdSe quantum wells: influence on interface and composition fluctuations

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 602-605

  Seedorf, T ^a   Cornelissen M ^a   Leonardi, K ^a   Hommel, D ^a   Selke, H ^a   Ryder, P L ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHASE COMPOSITION; PHOTOLUMINESCENCE; REDUCTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CADMIUM SELENIDE; COMPOSITION FLUCTUATIONS; MIGRATION ENHANCED EPITAXY; ZINC CADMIUM SELENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0000601584     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00161-5     Document Type: Article

References (9)

1. Kato E., Noguchi H., Nagai M., Okuyama H., Kijima S., Ishibashi A. Electron Lett. 34:1998;282.
2. M. Behringer, K. Ohkawa, V. Großmann, H. Heinke, K. Leonardi, M. Fehrer, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg, J. Crystal Growth 184/185 (1998) 580 and references therein.
3. Ivanov S., Sorokin S., Krestnikov I., Fleev N., Ber B., Sedova I., Kudryavtsev Yu., Kop'ev P. J. Cryst. Growth. 184/185:1998;70.
4. Rosenauer A., Reisiger T., Steinkircher E., Zweck J., Gebhardt W. J. Crystal Growth. 152:1995;42.
5. Rosenauer A., Kaiser S., Reisinger T., Zweck J., Gebhardt W., Gerthsen D. Optik. 102:1996;63.
6. Haase M.A., Baude P.F., Hagedorn M.S., Qiu J., DePuydt J.M., Cheng H., Guha S., Höfler G.E., Wu B.J. Appl. Phys. Lett. 63:1993;2315.
7. Short S.W., Luo H., Xin S., Yin A., Pareek A., Dobrowolska M., Furdyna J.K. J. Vac. Sci. Technol. B. 12:1994;1143.
8. Tu R.C., Su Y.K., Chou S.T. J. Appl. Phys. 85:1999;2398.
9. Pinardi K., Uma Jain S.C., Jain H.E., Maes R., Overstraeten Van, Willander M. J. Appl. Phys. 83:1998;4724. and references therein.