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Volumn 227-228, Issue , 2001, Pages 117-122
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Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature
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Author keywords
A1. Point defects; A3. Molecular beam epitaxy; B2. Photorefractive materials; B2. Semiconducting gallium arsenide
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Indexed keywords
ABSORPTION SPECTROSCOPY;
EXCITONS;
FOUR WAVE MIXING;
MOLECULAR BEAM EPITAXY;
NEODYMIUM LASERS;
PHOTOLUMINESCENCE;
PHOTOREFRACTIVE MATERIALS;
POINT DEFECTS;
PUMPING (LASER);
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
ALUMINUM GALLIUM ARSENIDE;
DEEP LEVELS;
OPTICAL TRANSIENT CURRENT SPECTROSCOPY;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0035399201
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00644-3 Document Type: Conference Paper |
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Times cited : (4)
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References (14)
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