FZ-Si crystal growth and HREM study of new types of extended defects during in situ electron irradiation

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 1-5

  Fedina, L ^a   Gutakovskii, A ^a   Aseev, A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

A1. Planar defects; A1. Point defects; A2. Floating zone technique; B2. Semiconducting silicon

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); POINT DEFECTS; SEMICONDUCTOR GROWTH;

FLOATING ZONE TECHNIQUES;

SEMICONDUCTING SILICON;

EID: 0035398760     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01039-9     Document Type: Article

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