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Volumn 227-228, Issue , 2001, Pages 395-398
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Investigation of the initial growth of cubic-GaN using an AlGaAs buffer layer grown on GaAs (1 0 0) by molecular beam epitaxy
a
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Author keywords
A1. Crystal structure; A1. High resolution X ray diffraction; A1. Nucleation; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials
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Indexed keywords
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
X RAY DIFFRACTION ANALYSIS;
EPILAYERS;
HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD);
SEMICONDUCTING FILMS;
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EID: 0035398271
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00731-X Document Type: Conference Paper |
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Times cited : (7)
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References (6)
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