Recombination current in GaAs/AlGaAs heterostructure bipolar transistors

International Journal of Electronics

Volumn 83, Issue 6, 1997, Pages 761-778

  Irvine, A C ^a,b   Woods, R C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004572225     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072197135049     Document Type: Article

References (20)

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