Characterization and reduction of edge leakage current in AlGaAs/GaAs heterojunction bipolar transistors

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 1999, Pages 248-253

  Bansropun, S ^a   Woods, R C ^a   Roberts, J S ^a   Grey, R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRIC CURRENTS; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; EDGE LEAKAGE CURRENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033313078     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)