Fine control of low-temperature: CVD epitaxial growth

Solid State Technology

Volumn 44, Issue 7, 2001, Pages 91-102

  Loup, V ^a   Hartmann, J M ^a   Semeria M N ^a   Samoilov, A V ^a   Washington, L ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SILICON; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL FILMS;

EPITAXIAL GROWTH;

EID: 0035396145     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (13)

1. Advancements in SiGe epitaxy for production applications
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3. Chemical-reaction engineering in the semiconductor industry
4. 4 in a rapid thermal chemical vapor deposition reactor
5. 2 chemical vapor deposition
6. Doping of epitaxial silicon: The effect of dopant partial pressure
7. High-mobility Si and Ge structures
8. Si/SiGe/Si pMOS performance - Alloy scattering and other considerations
9. Carbon-containing Group IV heterostructures on Si: Properties and device applications
10. Suppressed diffusion of boron and carbon in carbon-rich silicon