Etching mechanism of YMnO3 thin films in Cl2/Ar gas chemistries

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 4, 2001, Pages 1289-1293

  Min, Byung Jun ^a   Kim, Chang Il ^a   Kim, Yong Tae ^b  

^a Chung Ang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; DIELECTRIC FILMS; FERROELECTRIC THIN FILMS; INDUCTIVELY COUPLED PLASMA; MESFET DEVICES; RANDOM ACCESS STORAGE; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM COMPOUNDS;

ETCH RATE;

PLASMA ETCHING;

EID: 0035393691     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1368663     Document Type: Article

References (10)