|
Volumn 19, Issue 4, 2001, Pages 1111-1115
|
Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model
a b c d |
Author keywords
[No Author keywords available]
|
Indexed keywords
ALUMINUM COMPOUNDS;
AUGER ELECTRON SPECTROSCOPY;
DIMERS;
IONIZATION;
MULTILAYERS;
SECONDARY ION MASS SPECTROMETRY;
SPUTTERING;
SURFACE ROUGHNESS;
DOUBLE LAYER STRUCTURE;
SEMICONDUCTING GALLIUM ARSENIDE;
|
EID: 0035393104
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1345899 Document Type: Article |
Times cited : (12)
|
References (19)
|