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Volumn , Issue , 2000, Pages 188-191

A high-efficiency back-bias generator with cross-coupled hybrid pumping circuit for sub-1.5 v DRAM applications

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-COUPLED; HIGH-EFFICIENCY; LOW VOLTAGES; PUMPING CIRCUITS; PUMPING CURRENT; PUMPING EFFICIENCY;

EID: 84893797812     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (6)
  • 1
    • 0025537328 scopus 로고
    • A 1.5 v circuit technology for 64mb drams
    • Y. Nakagome et al., "A 1.5 V circuit technology for 64Mb DRAMs," in Symp. VLSI Cir. Dig. Tech. Papers, 1990, pp. 17-18.
    • (1990) Symp. VLSI Cir. Dig. Tech. Papers , pp. 17-18
    • Nakagome, Y.1
  • 2
    • 0026866024 scopus 로고
    • A 1-v operating 256-kb full-cmos sram
    • May
    • A. Sekiyama et al., "A 1-V operating 256-kb full-CMOS SRAM," IEEE J. Solid-State Circuits, vol. 27, no. 5, pp. 776-782, May 1992.
    • (1992) IEEE J. Solid-State Circuits , vol.27 , Issue.5 , pp. 776-782
    • Sekiyama, A.1
  • 3
    • 0028416570 scopus 로고
    • Standby/active mode logic for sub-1-V operating ULSI memory
    • April
    • D. Takashima et al., "Standby/active mode logic for sub-1-V operating ULSI memory," IEEE J. Solid-State Circuits, vol. 29, no. 4, pp. 441-447, April 1994.
    • (1994) IEEE J. Solid-State Circuits , vol.29 , Issue.4 , pp. 441-447
    • Takashima, D.1
  • 4
    • 0027876189 scopus 로고
    • An efficient back-bias generator with hybrid pumping circuit for 1.5 v DRAM's
    • Y. Tsukikawa et al., "An efficient back-bias generator with hybrid pumping circuit for 1.5 V DRAM's," in Symp. VLSI Cir. Dig. Tech Papers, 1993, pp. 85-86.
    • (1993) Symp. VLSI Cir. Dig. Tech Papers , pp. 85-86
    • Tsukikawa, Y.1
  • 6
    • 0032028335 scopus 로고    scopus 로고
    • A high-efficiency cmos voltage doubler
    • March
    • P. Favrat et al., "A high-efficiency CMOS voltage doubler," in IEEE J. Solid-State Circuits, vol. 33, no. 3, pp. 410-416, March 1998.
    • (1998) IEEE J. Solid-State Circuits , vol.33 , Issue.3 , pp. 410-416
    • Favrat, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.