IBIC analysis of high-power devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 181, Issue 1-4, 2001, Pages 311-314

  Osipowicz, T ^a   Zmeck, M ^a   Watt, F ^a   Fiege, G ^b   Balk, L ^b   Niedernostheide, F ^c   Schulze, H J ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF WUPPERTAL   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

High power device; IBIC

Indexed keywords

ION BEAMS; ION MICROSCOPES; RADIATION DETECTORS; SEMICONDUCTOR DOPING; SOLAR CELLS; THYRISTORS;

HIGH POWER DEVICES; ION BEAM INDUCED CHARGE MICROSCOPY (IBIC MICROSCOPY);

MICROELECTRONICS;

EID: 0035388022     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00487-6     Document Type: Conference Paper

References (6)