Light-triggered thyristors with integrated protection functions

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 267-270

  Niedernostheide, F J ^a   Schulze, H J ^a   Dorn, J ^a   Kellner Werdehausen, U ^a   Westerholt, D ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; ELECTRIC BREAKDOWN; ELECTRIC EQUIPMENT PROTECTION; NUMERICAL METHODS; PHOTODIODES; POWER CONVERTERS; RELIABILITY; RESISTORS; SEMICONDUCTOR DEVICE STRUCTURES;

AMPLIFYING GATE; HIGH-POWER THYRISTOR CONVERTER; INTEGRATED BREAKOVER DIODE; INTEGRATED OVERVOLTAGE PROTECTION; INTEGRATED PROTECTION FUNCTION; LIGHT-TRIGGERED THYRISTOR;

THYRISTORS;

EID: 0034449962     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Technology trends for HVDC thyristor valves
2. Progress in the development of an 8-kV light-triggered thyristor with integrated protection functions
3. Photocurrent imaging of silicon wafers using electrolyte contacts
4. Novel large area joining technique for improved power device performance
5. Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H)
6. Influence of silicon crystal defects and contamination on the electrical behavior of power devices
7. Light-triggered thyristor valve for HVDC application