Characterization of CVD diamond film/porous silicon composite

Guangxue Xuebao/Acta Optica Sinica

Volumn 21, Issue 6, 2001, Pages 753-756

  Wang, Linjun ^a   Xia, Yiben ^a   Ju, Jianhua ^a   Fan, Yimin ^a   Zhang, Wenguang ^a   Mo, Yaowu ^a   Shi, Weimin ^a   Sang, Wenbin ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

Diamond film; Passivation; Photoluminescence; Porous silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; MICROWAVES; PASSIVATION; PHOTOLUMINESCENCE; PLASMAS; POROUS SILICON;

PASSIVATION TECHNOLOGY; PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; POROUS SILICON SURFACE;

COMPOSITE MATERIALS;

EID: 0035381743     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
2. Luminescence degradation in porous silicon
3. 3 species
4. Surface passivation: A critical parameter for the visible luminescence of electroxidised porous silicon
5. Oxygen defect center red room temperature photoluminescence from freshly etched and oxidized porous silicon
6. The effect of surface modification on the luminescence of porous silicon
7. Ion-implantation in diamond and diamond films: Doping, damage effects and their applications
8. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films
9. A porous silicon-based optical interferometric biosensor