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IEE Proceedings: Circuits, Devices and Systems

Volumn 148, Issue 3, 2001, Pages 157-164

Fully differential switched-current memory cell with low charge-injection errors

(2) Balachandran, G K a Allen, P E a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; DIFFERENTIATING CIRCUITS; ELECTRIC CHARGE; ELECTRIC CLOCKS; HARMONIC DISTORTION; LIMITERS; SIGNAL TO NOISE RATIO; TRANSFER FUNCTIONS;

CHARGE-INJECTION ERRORS; SWITCHED CURRENT MEMORY CELLS;

SWITCHING CIRCUITS;

EID: 0035360763 PISSN: 13502409 EISSN: None Source Type: Journal
DOI: 10.1049/ip-cds:20010128 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.