Light emitting diodes for the spectral range λ = 3.3-4.3 μm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20-180°C (part 21)

Semiconductors

Volumn 35, Issue 5, 2001, Pages 598-604

  Aidaraliev M ^a   Zotova, N V ^a   Karandashev, S A ^a   Matveev, B A ^a   Remennyi M A ^a   Stus', N M ^a   Talalakin, G N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035343633     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1371629     Document Type: Article

References (16)

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