Light emitting diodes for the spectral range of λ = 3.3-4.3 μm fabricated from the inGaAs-and InAsSbP-based solid solutions: Electroluminescence in the temperature range of 20-180°C

Semiconductors

Volumn 34, Issue 1, 2000, Pages 104-107

  Aidaraliev M ^a   Zotova, N V ^a   Karandashev, S A ^a   Matveev, B A ^a   Remennyi M A ^a   Stus', N M ^a   Talalakin, G N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033628872     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187963     Document Type: Article

References (10)

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