Poiseuille number for the fully developed laminar flow through hexagonal ducts etched in 〈1 0 0〉 silicon

Sensors and Actuators, A: Physical

Volumn 90, Issue 1-2, 2001, Pages 96-101

  Damean, N ^a   Regtien, P P L ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Fully developed laminar flow; Hexagonal duct; Poiseuille number

Indexed keywords

ASPECT RATIO; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL ORIENTATION; DUCTS; ETCHING; POISSON EQUATION; SEMICONDUCTING SILICON;

HEXAGONAL DUCTS; POISEUILLE NUMBER;

LAMINAR FLOW;

EID: 0035341386     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00457-5     Document Type: Article

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