Sn nanoclusters formed in thermally grown SiO2 studied by Mössbauer spectroscopy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 93-96

  Koops, G E J ^a   Nauwelaerts, S ^a   Venegas, R ^b   Vantomme, A ^a   Pattyn, H ^a  

^a KU LEUVEN   (Belgium)

^b UNIVERSIDAD DE SANTIAGO DE CHILE   (Chile)

Author keywords

M ssbauer spectroscopy; Nanoparticles; Oxides; Rutherford backscattering

Indexed keywords

ANNEALING; CRYSTAL LATTICES; FILM GROWTH; MOSSBAUER SPECTROSCOPY; NANOSTRUCTURED MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; TIN;

DEBYE TEMPERATURE; NANOCLUSTERS;

SEMICONDUCTING FILMS;

EID: 0035335198     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00499-2     Document Type: Conference Paper

References (10)