Structural characterization of epitaxial ZnO films grown on (0 0 0 1) Al2O3 by electron cyclotron resonance-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 208-213

  Lim, S H ^a,b   Shindo, D ^a   Kang, H B ^a   Nakamura, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A1. Defects; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

ALUMINA; CRYSTALLOGRAPHY; DIELECTRIC FILMS; DISLOCATIONS (CRYSTALS); ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); MOIRE FRINGES; MOLECULAR BEAM EPITAXY; OPTICAL RESOLVING POWER; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

BURGERS VECTORS; THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0035334881     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00876-4     Document Type: Conference Paper

References (10)