Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 A, 1998, Pages 781-785

  Kang, Hee Bog ^a   Nakamura, Kiyoshi ^a   Lim, Sung Hwan ^a   Shindo, Daisuke ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

ECR assisted MBE; Epitaxy; TEM; Zinc oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

LOW TEMPERATURE GROWTH;

SEMICONDUCTING FILMS;

EID: 0032023610     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.781     Document Type: Article

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