Thermal redistribution of Al implanted in Si: Evidences for interactions with extended defects

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 122-126

  Ortiz, Ch ^a,b   Grob, J J ^a   Mathiot, D ^a   Claverie, A ^c   Dubois, Ch ^d   Jerisian R ^d  

^a Faculté de Médecine   (France)

^b Lab de Micro Electron de Puissance   (France)

^c CEMES CNRS   (France)

^d Lab de Phys de la Matière   (France)

Author keywords

Diffusion; Gettering; Ion implantation

Indexed keywords

ALUMINUM; ANNEALING; ATOMS; CRYSTAL DEFECTS; DIFFUSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DIFFUSIVITY; EXTENDED DEFECT; THERMAL REDISTRIBUTION;

ION IMPLANTATION;

EID: 0032760761     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00575-8     Document Type: Article

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