Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient

Journal of Applied Physics

Volumn 87, Issue 5, 2000, Pages 2661-2663

  Ortiz, Ch ^a,c   Mathiot, D ^a   Dubois, Ch ^b   Jerisian R ^c  

^a Faculté de Médecine   (France)

^b UNIVERSITÉ DE LYON   (France)

^c LMP   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000101045     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372236     Document Type: Article

References (16)

1. G. Galvagno, F. La Via, F. Priolo, and E. Rimini, Semicond. Sci. Technol. 8, 488 (1993).
2. Ch. Ortiz, J. J. Grob, D. Mathiot, A. Claverie, Ch. Dubois, and R. Jérisian, Nucl. Instrum. Methods Phys. Res. B 147, 122 (1999).
3. P. Bruesch, E. Halder, P. Kluge, J. Rhyner, P. Roggwiller, Th. Stockmeier, F. Stucki, and H. J. Wiesmann, J. Appl. Phys. 68, 2226 (1990).
4. G. Galvagno, A. Scandurra, V. Raineri, C. Spinella, A. Torrisi, A. La Ferla, V. Sciascia, and E. Rimini, J. Electrochem. Soc. 140, 2313 (1993).
5. A. La Ferla, L. Torrisi, G. Galvagno, and E. Rimini, Appl. Phys. Lett. 62, 393 (1993).
6. S. Mizuo and H. Higuchi, Jpn. J. Appl. Phys., Part 1 21, 56 (1982).
7. R. N. Ghoshtagore, Phys. Rev. B 3, 2507 (1971).
8. C. S. Fuller and J. A. Ditzenberger, J. Appl. Phys. 27, 544 (1956).
9. Y. Ishikawa, Y. Sakina, H. Tanaka, S. Mathsumoto, and T. Niimi, J. Electrochem. Soc. 129, 644 (1982).
10. D. A. Antoniadis and I. Moskowitz, J. Appl. Phys. 53, 6788 (1982).
11. M. Miyake and H. Harada, J. Electrochem. Soc. 129, 1097 (1982).
12. M. M. Atalla and E. Tannenbaum, Bell Syst. Tech. J. 39, 933 (1960).
13. P. Pichler, W. Jungling, S. Selberherr, E. Guerrero, and H. W. Pötzl, IEEE Trans. Comput.-Aided Des. 4, 384 (1985).
14. D. A. Antoniadis, A. G. Gonzalez, and R. W. Dutton, J. Electrochem. Soc. 125, 813 (1978).
15. M. Miyake, J. Appl. Phys. 57, 1861 (1985).
16. A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999).