Radial confinement in lateral power devices

Microelectronics Journal

Volumn 32, Issue 5-6, 2001, Pages 481-484

  Krishnan, S ^a   De Souza, M M ^a   Narayanan, E M S ^a   Vellvehi, M ^b   Roig, J ^b   Flores, D ^b   Rebollo, J ^b   Millan, J ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Lateral power devices; Radial confinement; Radial diode; SOI and SOS technologies

Indexed keywords

ANODES; CATHODES; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; SEMICONDUCTOR DIODES; SILICON ON INSULATOR TECHNOLOGY; SILICON ON SAPPHIRE TECHNOLOGY; THIN FILM TRANSISTORS;

LATERAL POWER DEVICES;

POWER ELECTRONICS;

EID: 0035334563     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00018-0     Document Type: Article

References (11)

1. High voltage thin layer devices (RESURF Devices)
2. Lateral HVIC with 1200-V bipolar and field-effect devices
3. Extension of RESURF principle to dielectrically isolated power devices
4. A 1200 V BiCMOS technology and its applications
5. Double RESURF device technology for power ICs
6. SOI process merges power and logic devices on one chip
7. Realization of high breakdown voltage (700 V) in thin SOI devices
8. Variation of lateral doping. A new concept to avoid high voltage breakdown of planar junctions
9. Lateral IGBT in thin SOI for high voltage, high speed power IC
10. Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors