Effects of photocurrent multiplication in HgCdTe photodiodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3061, Issue , 1997, Pages 68-77

  Miyatake, Tetsuya ^a   Sugiyama, Iwao ^a   Kajihara, Nobuyuki ^a   Miyamoto, Yoshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Differential resistance voltage characteristics; HgCdTe; Impact ionization; Photodiode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT RESISTANCE; INFRARED RADIATION; IONIZATION; MERCURY COMPOUNDS; PHOTOCURRENTS; PHOTODIODES; PHOTOIONIZATION; PHOTONS;

BREAKDOWN MECHANISMS; DEPLETION REGIONS; DIFFERENTIAL RESISTANCE-VOLTAGE CHARACTERISTICS; ELECTRON IMPACTS; HGCDTE; HGCDTE PHOTODIODES; LOW TEMPERATURE REGIONS; MEASURED RESULTS; PHOTOCURRENT MULTIPLICATIONS; PHOTOMULTIPLICATION; PHOTON FLUX DENSITIES; REVERSE BIAS VOLTAGES; REVERSE CURRENTS; TEMPERATURE RANGES;

IMPACT IONIZATION;

EID: 0003829497     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.280322     Document Type: Conference Paper

References (19)

1. R.E. DeWames, G.M. Williams, J.G. Pasko, and A.H.B. Vanderwyck, "Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation" J. Cryst. Growth 86, 849 (1988).
2. Y. Nemirovsky, D. Rosenfeld, R. Adar, and A. Kornfeld, "Tunneling and dark currents in HgCdTe photodiodes" J. Vac. Sci. Technol. A7, 528 (1989).
3. xTe photodiodes" Infrared Phys. 27, 143 (1987).
4. W.W. Anderson, "Tunnel current limitations of narrow bandgap infrared charge coupled devices" Infrared Phys. 17, 147 (1977).
5. D.K. Blanks, J.D. Beck, M.A. Kinch, and L. Colombo, "Band-to-band tunnel processes in HgCdTe : Comparison of experimental and theoretical studies", J. Vac. Sci. Technol. A6, 2790 (1988).
6. xTe photodiodes" IEEE Trans. Electron Devices ED-27, 48 (1980).
7. A. Unikovsky, and Y. Nemirovsky "Trap-assisted tunneling in mercury cadmium telluride photodiodes" Appl. Phys. Lett. 61, 330 (1992).
8. Richard Schoolar, "Photoconductivity in photodiodes" Infrared Phys. 31, 467 (1991).
9. xTe" J. Appl. Phys. 71, 5705 (1993).
10. J.P. Rosbeck, R.E. Starr, S.L. Price, and K.J. Riley, "Background and temperature dependent current-voltage characteristics of HgCdTe photodiodes" J. Appl. Phys. 53, 6430 (1982).
11. 1-xTe" J. Vac. Sci. Technol. A8, 1251 (1990).
12. xTe" J. Appl. Phys. 54, 1639 (1983).
13. xTe" J. Appl. Phys. 53, 7099 (1982).
14. William Shockley, "Problems related to p-n junctions in silicon", Solid-State Electron. 2, 35 (1961).
15. xTe" J. Appl. Phys. 50, 4356 (1979).
16. xTe" J. Appl. Phys. 56, 2896 (1984).
17. S.E. Schacham, and E. Finkman, "Recombination mechanisms in p-type HgCdTe : Freezeout and background flux effects" J. Appl. Phys. 57, 2001 (1985).
18. xTe alloys" Infrared Phys. 20, 363 (1980).
19. 1-xTe", Solid State Commun. 10, 875 (1972).