Performance improvement of gated silicon field emitters with a thin layer of boron nitride

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 907-911

  Busta, H ^a   Furst, D ^a   Pryor, R ^b   Li, Lihua ^b  

^a SARNOFF CORPORATION   (United States)

^b WAYNE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CARBON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ION BOMBARDMENT; PLASMA ETCHING; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPUTTERING; VACUUM APPLICATIONS;

REACTIVE SPUTTERING;

MICROELECTRONIC PROCESSING;

EID: 0035326248     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1370179     Document Type: Conference Paper

References (16)

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