Observation of the Fermi-edge singularity in n-doped single asymmetric quantum wells: The influence of residual acceptors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 9, Issue 4, 2001, Pages 709-715

  Qu, Fanyao ^a   Dantas, N O ^a   Morais, P C ^b  

^a FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

^b UNIVERSITY OF BRASILIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

FERMI-EDGE SINGULARITY; SINGLE ASYMMETRIC QUANTUM WELLS (SAQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035313827     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00280-0     Document Type: Article

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