Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

Solid State Communications

Volumn 106, Issue 12, 1998, Pages 811-814

  Li, Hanxuan ^a   Wang, Zhanguo ^a   Liang, Jiben ^a   Xu, Bo ^a   Jiang, Chao ^a   Gong, Qian ^a   Liu, Fengqi ^a   Zhou, Wei ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A. quantum wells; A. semiconductors; D. electronic band structure; E. luminescence

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; FERMI LEVEL; FOURIER TRANSFORMS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

FERMI EDGE SINGULARITY; OPTICAL TRANSITIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032094102     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00139-2     Document Type: Article

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