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Journal of Non-Crystalline Solids

Volumn 282, Issue 2-3, 2001, Pages 321-324

Correlation between photoluminescence efficiency and density of paramagnetic defects in Er-doped hydrogenated amorphous silicon

(6) Konstantinova, E A a,b Kamenev, B V b Kashkarov, P K b Timoshenko, V Yu b Kudoyarova, V Kh c Terukov, E I c

a TECHNICAL UNIVERSITY OF MUNICH (Germany)

b MOSCOW STATE UNIVERSITY (Russian Federation)

c IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ERBIUM; HYDROGENATION; OXYGEN; PARAMAGNETIC RESONANCE; PARAMAGNETISM; PHOTOLUMINESCENCE;

PARAMAGNETIC DEFECTS;

AMORPHOUS SILICON;

EID: 0035311166 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00360-X Document Type: Article

Times cited : (8)

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