Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1164-1167

  Gusev, Oleg ^a   Bresler, Mikhail ^a   Kuznetsov, Alexey ^a   Kudoyarova, Vera ^a   Pak, Petr ^a   Terukov, Evgenii ^a   Tsendin, Konstantin ^a   Yassievich, Irina ^a   Fuhs, Walther ^b   Weiser, Gerhard ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b HAHN MEITNER INSTITUT   (Germany)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Amorphous silicon; Dangling bond defects; Defect related Auger excitation; Erbium ion electroluminescence; Ionization

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRIC EXCITATION; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ERBIUM; IONIZATION OF SOLIDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

DANGLING BOND DEFECTS; DEFECT RELATED AUGER EXCITATION (DRAE); ROOM TEMPERATURE ELECTROLUMINESCENCE;

AMORPHOUS SILICON;

EID: 0032068310     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00283-X     Document Type: Article

References (6)

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