SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 16, Issue 4, 2001, Pages 281-282

Comment on 'modelling the optical constants of GaAs: Excitonic effects at E1, E1 + Δ1 critical points'

(3) Munoz M a,c Pollak, Fred H a Holden, Todd b

a CITY UNIVERSITY OF NEW YORK (United States)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

c DEPARTAMENTO DE FÍSICA (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; DIELECTRIC PROPERTIES; EXCITONS; FUNCTIONS; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PARTICLES (PARTICULATE MATTER); THERMAL EFFECTS;

BAND-TO-BAND SINGLE PARTICLE EXPRESSIONS; DIELECTRIC FUNCTION; EXCITONIC EFFECTS; GALLIUM ARSENIDE; OPTICAL CONSTANTS; PSEUDO-GAUSSIAN BROADENING FUNCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035308491 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/4/401 Document Type: Note

Times cited : (2)

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