Modelling the optical constants of GaAs: excitonic effects at E1, E1 + Δ1 critical points

Semiconductor Science and Technology

Volumn 14, Issue 11, 1999, Pages 958-960

  Djurisic A B ^a   Li, E H ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; EXCITONS; MATHEMATICAL MODELS; PHONONS; PHOTONS; REFRACTIVE INDEX;

DIELECTRIC FUNCTION; EXCITONIC EFFECTS; OPTICAL CONSTANTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033338357     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/11/302     Document Type: Article

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