Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure

Physica B: Condensed Matter

Volumn 298, Issue 1-4, 2001, Pages 191-194

  Hashimoto, K ^a,b   Muraki, K ^a   Saku, T ^a   Hirayama, Y ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Back gated GaAs AlGaAs single heterostructure; Fractional quantum Hall effect; Longitudinal resistance; Nuclear spin

Indexed keywords

ELECTRIC RESISTANCE; HALL EFFECT; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

FRACTIONAL QUANTUM HALL EFFECTS;

HETEROJUNCTIONS;

EID: 0035304580     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00299-X     Document Type: Article

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