New resistance maxima in the fractional quantum hall effect regime

Physical Review Letters

Volumn 81, Issue 12, 1998, Pages 2526-2529

  Kronmuller S ^a   Dietsche, W ^a   Weis, J ^a   von Klitzing, K ^a   Wegscheider, W ^b   Bichler, M ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; HALL EFFECT; LIGHT EMITTING DIODES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

ELECTRONIC SPIN STATES; FRACTIONAL QUANTUM HALL EFFECTS; HALL BARS; NUCLEAR SPIN POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032555864     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.2526     Document Type: Article

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