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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 274-279

Ar-implanted epitaxially grown HgCdTe: Evaluation of structural damage by RBS and TEM

(2) Aguirre, M H a Canepa H R b

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

b Instituto de Investigaciones Cientificas y Tecnicas de Las Fuerzas Armadas (Argentina)

Author keywords

Defects; Dislocations; HgCdTe; Ion implantation; RBS; TEM

Indexed keywords

ARGON; DIFFUSION; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; MERCURY COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

ISOTHERMAL VAPOR PHASE EPITAXY (ISOVPE);

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0035303268 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00632-7 Document Type: Conference Paper

Times cited : (4)

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