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Volumn 28, Issue 6, 1999, Pages 854-857
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Dependency of p-n junction depth on ion species implanted in HgCdTe
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
COMPOSITION EFFECTS;
COMPRESSIVE STRESS;
CRYSTAL LATTICES;
HALL EFFECT;
ION IMPLANTATION;
MAGNETIC VARIABLES MEASUREMENT;
SEMICONDUCTING CADMIUM TELLURIDE;
TENSILE STRESS;
MERCURY CADMIUM TELLURIDE;
SEMICONDUCTOR JUNCTIONS;
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EID: 0032680584
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-999-0083-1 Document Type: Article |
Times cited : (16)
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References (18)
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