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Volumn 28, Issue 6, 1999, Pages 854-857

Dependency of p-n junction depth on ion species implanted in HgCdTe

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; COMPRESSIVE STRESS; CRYSTAL LATTICES; HALL EFFECT; ION IMPLANTATION; MAGNETIC VARIABLES MEASUREMENT; SEMICONDUCTING CADMIUM TELLURIDE; TENSILE STRESS;

EID: 0032680584     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0083-1     Document Type: Article
Times cited : (16)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.