Microstructural changes in silicon thermal oxide induced by high-flux copper negative-ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 345-349

  Amekura, H ^a   Umeda, N ^b   Okubo, N ^b   Lee, C G ^a   Takeda, Y ^a   Kishimoto, N ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Amorphization; Enhanced sputtering; High flux implantation; Nanoparticle; Reflectivity; SiO2 on Si

Indexed keywords

AMORPHIZATION; ATOMIC FORCE MICROSCOPY; COPPER; CRYSTALLINE MATERIALS; ION IMPLANTATION; LIGHT INTERFERENCE; LIGHT REFLECTION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SILICA; SILICON WAFERS; SUBSTRATES;

HIGH-FLUX IMPLANTATION;

SEMICONDUCTING FILMS;

EID: 0035303063     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00637-6     Document Type: Conference Paper

References (16)