Compositional dependence of defect mobility and damage buildup in AlxGa1-xAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 219-223

  Stonert, A ^a,b   Turos, A ^a,b   Nowicki, L ^a   Breeger, B ^c   Wendler, E ^c   Wesch, W ^c  

^a SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

III V Semiconductors; Ion implantation; Radiation damage; RBS channeling

Indexed keywords

ARGON; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL LATTICES; ION BOMBARDMENT; ION IMPLANTATION; NITROGEN; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TERNARY SYSTEMS; THERMAL EFFECTS;

DEFECT MOBILITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035302589     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00596-6     Document Type: Conference Paper

References (13)