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Volumn 40, Issue 4 A, 2001, Pages 2105-2109
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New technique to determine gettering efficiency of heavy metals and its application to carbon-ion-implanted Si epitaxial wafers
a
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HITACHI LTD
(Japan)
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Author keywords
Carbon; Epitaxial; Fluorine; Gettering; Implantation; Si; Si dioxide
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Indexed keywords
ANNEALING;
DEPOSITION;
DIFFUSION IN SOLIDS;
EPITAXIAL GROWTH;
FLUORESCENCE;
GETTERS;
ION IMPLANTATION;
PRECIPITATION (CHEMICAL);
SILICON WAFERS;
X RAY ANALYSIS;
TOTAL X RAY REFLECTION FLUORESCENCE (TXRF);
HEAVY METALS;
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EID: 0035302315
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.2105 Document Type: Article |
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Times cited : (3)
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References (21)
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