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Volumn 38, Issue 6 A, 1999, Pages 3776-3783
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Simultaneous measurement of size and depth of each defect in a silicon wafer using light scattering at two wavelengths: Principle, limitation and applications of optical shallow defect analyzer
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL GROWTH FROM MELT;
CRYSTAL MICROSTRUCTURE;
EPITAXIAL GROWTH;
LIGHT SCATTERING;
THERMOOXIDATION;
CRYSTAL ORIGINATED PARTICLES (COP);
OPTICAL SHALLOW DEFECT ANALYZER (OSDA);
SILICON WAFERS;
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EID: 0032688356
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.3776 Document Type: Article |
Times cited : (3)
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References (18)
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