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Volumn 38, Issue 6 A, 1999, Pages 3776-3783

Simultaneous measurement of size and depth of each defect in a silicon wafer using light scattering at two wavelengths: Principle, limitation and applications of optical shallow defect analyzer

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; LIGHT SCATTERING; THERMOOXIDATION;

EID: 0032688356     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3776     Document Type: Article
Times cited : (3)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.