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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 1 A/B, 2000, Pages

Higher resistivities obtained by iron-diffusion into undoped semi-insulating GaAs

(3) Ohsawa, Jun a Ozaki, Yasutaka a Misaki, Takashi a

a TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; FERMI LEVEL; IRON; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

LIQUID ENCAPSULATED CZOCHRALSKI (LEC) GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033880213 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l13 Document Type: Article

Times cited : (3)

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