Ultra-shallow junction formation in silicon using ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 177-183

  Tasch, A F ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOSIMETRY; MONTE CARLO METHODS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

ULTRASHALLOW JUNCTION FORMATION;

ION IMPLANTATION;

EID: 0030563582     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01246-X     Document Type: Article

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