Analysis of processing damage on a ferroelectric SrBi2Ta2O9 capacitor for ferroelectric random access memory device fabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2341-2347

  Kawahara, J ^a   Matsuki, T ^a   Hayashi, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

FeRAM; Hydrogen; O3 TEOS SiO2; Plasma; Process damage; SrBi2Ta2O9

Indexed keywords

CAPACITOR STORAGE; CHEMICAL VAPOR DEPOSITION; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; MASKS; OZONE; PHOTORESISTS; POLARIZATION; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; STRONTIUM COMPOUNDS;

HYDROGEN REGENERATION; REMANENT POLARIZATION;

FERROELECTRIC DEVICES;

EID: 0035301982     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2341     Document Type: Article

References (16)