Ultrashallow junction formation for sub-100 nm complementary metal-oxide-semiconductor field-effect transistor by controlling transient enhanced diffusion

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2701-2705

  Ohuchi, Kazuya ^a   Adachi, Kanna ^a   Murakoshi, Atsushi ^a   Hokazono, Akira ^a   Kanemura, Takahisa ^a   Aoki, Nobutoshi ^a   Nishigohri, Masahito ^a   Suguro, Kyoichi ^a   Toyoshima, Yoshiaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Arsenic; Boron; Damage recovery; Extension; Germanium; Low energy ion implantation; MOSFET; Preamorphization implantation; RTA; Shallow junction; Transient enhanced diffusion

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; PRESSURE EFFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS;

PREAMORPHIZATION; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0035300771     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2701     Document Type: Article

References (5)