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Volumn 41, Issue 3, 2001, Pages 445-453

Modeling bimodal electromigration failure distributions

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMIGRATION; FAILURE ANALYSIS; MODAL ANALYSIS; NORMAL DISTRIBUTION; SEMICONDUCTOR DEVICE MODELS;

EID: 0035276217     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00246-8     Document Type: Article
Times cited : (20)

References (10)
  • 2
    • 0033225102 scopus 로고    scopus 로고
    • Electromigration and mechanical stress
    • Lloyd J.R. Electromigration and mechanical stress. Microelectron Engng. 49:1999;51-64.
    • (1999) Microelectron Engng , vol.49 , pp. 51-64
    • Lloyd, J.R.1
  • 6
    • 0026188616 scopus 로고
    • The effect of the barrier layers on the distribution function of interconnect electromigration failures
    • Pinto M. The effect of the barrier layers on the distribution function of interconnect electromigration failures. Quality Reliab Engng Internat. l7:1991;287-291.
    • (1991) Quality Reliab Engng Internat , vol.7 , pp. 287-291
    • Pinto, M.1
  • 9
    • 0001446157 scopus 로고
    • On the lognormal distribution of electromigration lifetimes
    • Lloyd J.R. On the lognormal distribution of electromigration lifetimes. J Appl Phys. 50:1979;5062-5064.
    • (1979) J Appl Phys , vol.50 , pp. 5062-5064
    • Lloyd, J.R.1
  • 10
    • 0032003014 scopus 로고    scopus 로고
    • A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
    • Degraeve R., Ogier J.L., Bellens R., Roussel P.J., Groeseneken G. A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown. IEEE Trans Electron Dev. 45(2):1998;472-481.
    • (1998) IEEE Trans Electron Dev , vol.45 , Issue.2 , pp. 472-481
    • Degraeve, R.1    Ogier, J.L.2    Bellens, R.3    Roussel, P.J.4    Groeseneken, G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.