SCOPUS 정보 검색 플랫폼

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 481-484

Characterization of deep levels in SiC by photoluminescence spectroscopy and mapping

(5) Tajima, M a Kumagaya, Y b,d Nakata, T c Inoue, M c Nakamura, A b

a JAPAN AEROSPACE EXPLORATION AGENCY (Japan)

b UNIVERSITY OF TOKYO (Japan)

c Ion Eng Res Institute Corporation (Japan)

d FUJITSU LABORATORIES LTD (Japan)

Author keywords

Deep Level; Defect; Gettering; Mapping; Photoluminescence; Vanadium

Indexed keywords

CRACKS; CRYSTAL IMPURITIES; ENERGY GAP; PHOTOLUMINESCENCE; PHOTONS; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; STRAIN; VANADIUM;

GETTERING EFFECTS; MACRODEFECTS; PHOTOLUMINESCENCE SPECTROSCOPY;

SILICON CARBIDE;

EID: 3743126171 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.481 Document Type: Article

Times cited : (11)

References (12)

1
- 0000266774
- N. T. Son, E. Sörman, W. M. Chen, O. Kordina, B. Monemar and E. Janzén, Appl. Phys. Lett. 65(1994), p. 2687.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2687
- Son, N.T.¹ Sörman, E.² Chen, W.M.³ Kordina, O.⁴ Monemar, B.⁵ Janzén, E.⁶

2
- 36449005454
- H. McD. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel and M. Roth, Appl. Phys. Lett. 66 (1995), p. 1364.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1364
- Hobgood, H.McD.¹ Glass, R.C.² Augustine, G.³ Hopkins, R.H.⁴ Jenny, J.⁵ Skowronski, M.⁶ Mitchel, W.C.⁷ Roth, M.⁸

3
- 0031220283
- to be published, No. 9B
- M. Tajima, Y. Kumagaya, T. Nakata, M. Inoue and A. Nakamura, to be published in Jpn. J. Appl. Phys. 36 (1997), Part 2, No. 9B.
- (1997) Jpn. J. Appl. Phys. , vol.36 , Issue.2 PART
- Tajima, M.¹ Kumagaya, Y.² Nakata, T.³ Inoue, M.⁴ Nakamura, A.⁵

4
- 77954657556
- M. Tajima, Inst. Phys. Conf. Ser. No. 149 (1996), p. 243.
- (1996) Inst. Phys. Conf. Ser. No. 149 , pp. 243
- Tajima, M.¹

5
- 36549092940
- J. Schneider, H. D. Müller, K. Maier, W. Wilkening and F. Fuchs, Appl. Phys. Lett. 56 (1990), p. 1184.
- (1990) Appl. Phys. Lett. , vol.56 , pp. 1184
- Schneider, J.¹ Müller, H.D.² Maier, K.³ Wilkening, W.⁴ Fuchs, F.⁵

6
- 0001313288
- H. Tews, H. Venghaus and P. J. Dean, Phys. Rev. B19 (1979), p. 5178.
- (1979) Phys. Rev. , vol.B19 , pp. 5178
- Tews, H.¹ Venghaus, H.² Dean, P.J.³

7
- 0028762122
- M. Tuominen, R. Yakimova, R. C. Glass, T. Tuomi and E. Janzén, J. Cryst. Growth 144 (1994), p. 267.
- (1994) J. Cryst. Growth , vol.144 , pp. 267
- Tuominen, M.¹ Yakimova, R.² Glass, R.C.³ Tuomi, T.⁴ Janzén, E.⁵

8
- 0006442241
- T. Kato, H. Ohsato, M. Razeghi and T. Okuda, Inst. Phys. Conf. Ser. No. 142 (1996), p. 417.
- (1996) Inst. Phys. Conf. Ser. No. 142 , pp. 417
- Kato, T.¹ Ohsato, H.² Razeghi, M.³ Okuda, T.⁴

9
- 0025438144
- M. Tajima, J. Cryst. Growth 103 (1990), p. 1.
- (1990) J. Cryst. Growth , vol.103 , pp. 1
- Tajima, M.¹

10
- 0342547624
- K. Leo, W. W. Rühle and P. Nordberg, J. Appl. Phys. 66 (1989), p. 1800.
- (1989) J. Appl. Phys. , vol.66 , pp. 1800
- Leo, K.¹ Rühle, W.W.² Nordberg, P.³

11
- 0003969306
- Oxford, London
- A. H. Cottrell, Dislocations and Plastic Flaw in Crystals (Oxford, London, 1953), p. 133.
- (1953) Dislocations and Plastic Flaw in Crystals , pp. 133
- Cottrell, A.H.¹

12
- 3743068213
- G. A. Rozgonyi and M. A. Afromowitz, Appl. Phys. Lett. 19 (1971), p. 153.
- (1971) Appl. Phys. Lett. , vol.19 , pp. 153
- Rozgonyi, G.A.¹ Afromowitz, M.A.²

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