Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1268-1272

  Wang, Y H ^a   Lin, J ^a   Huan, C H A ^a   Feng, Z C ^b   Chua, S J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

3C SiC; Hydrogenated amorphous silicon carbide; Rapid thermal annealing; Statistically oriented

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NUCLEATION; POLYCRYSTALLINE MATERIALS; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SILICON CARBIDE; STOICHIOMETRY;

EPITAXIAL RELATION;

THIN FILMS;

SILICON CARBIDE;

EID: 0035271212     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00450-7     Document Type: Article

References (20)

1. Davis R.F., Kelner G., Shur M., Palmour J.W., Edmond J.A. Proc. IEEE. 79:1991;677.
2. Morkoc H., Strite S., Gao G.B., Lin M.E., Svertlov B., Burns M. J. Appl. Phys. 76:1994;1363.
3. Brown D.M., Downey E., Grezzo M., et al. Solid State Electronics. 59:1996;1531.
4. Nelson W.E., Halden F.A., Rosengreen A. J. Appl. Phys. 37:1966;333.
5. Liaw P., Davis R.F. J. Electrochem. Soc. 132:1985;642.
6. Nishino S., Powell J.A., Will H.A. Appl. Phys. Lett. 42:1983;460.
7. Kunstmann T., Veperk S. Appl. Phys. Lett. 67:1995;3126.
8. Kim H.J., Davis R.F. J. Appl. Phys. 60:1986;2897.
9. Steckl A.J., Li J.P. Thin Solid Films. 216:1992;149.
10. Boo J.H., Yu K.S., Lee M., Kim Y. Appl. Phys. Lett. 66:1995;3486.
11. Hofmann J., Veprek S., Heindl J. J. Appl. Phys. 85:1999;2652.
12. Liu C.W., Sturm J.C. J. Appl. Phys. 82:1997;4558.
13. Lifshitz Y. Diamond Relat. Mater. 8:1999;1659.
14. Wang W.N., et al. Phys. Stat. Sol. (a). 154:1996;255.
15. Huong P.V. Mater. Sci. Eng. B. 11:1992;235.
16. Wagner J., Ramsteiner M., Wild C., Koidl P. Phys. Rev. B. 40:1989;1817.
17. Yoshikawa M., Nagai N., Matsuki M., et al. Phys. Rev. B. 46:1992;7169.
18. Matthews M.J., Pimenta M.A., Dresselhaus G., Dresselhaus M.S., Endo M. Phys. Rev. B. 59:1999;R6585.
19. Shroder R.E., Nemanich R.J., Glass J.T. Phys. Rev. B. 41:1990;3738.
20. Robertson J. Phys. Rev. B. 53:1996;16302.